Title :
Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K
Author :
Simoen, Eddy ; Dierickx, Bart ; Claeys, Cor L.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
7/1/1993 12:00:00 AM
Abstract :
The low-frequency (LF) noise behavior of Si NMOSTs stressed at 4.2 K is investigated and compared with the stress-induced changes in the DC parameters. In linear operation, a reduction of the noise spectral density is observed, which can be explained by considering the reduction in the device transconductance. The excess noise, typically observed in the kink region, is reduced after stress, as is the noise hysteresis. This behaviour can be understood by substituting the changes in the substrate current characteristic in the excess-noise model derived
Keywords :
elemental semiconductors; insulated gate field effect transistors; semiconductor device models; semiconductor device noise; silicon; 4.2 K; DC parameters; LF noise behaviour; NMOSTs; Si; device transconductance; excess-noise model; kink region; noise hysteresis; noise spectral density; stress-induced changes; substrate current characteristic; CMOS technology; Low-frequency noise; MOSFETs; Noise generators; Noise measurement; Noise reduction; Semiconductor device modeling; Stress; Temperature; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
