Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K

Author

Simoen, Eddy ; Dierickx, Bart ; Claeys, Cor L.

Author_Institution

IMEC, Leuven, Belgium

Volume

40

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

1296

Lastpage

1299

Abstract

The low-frequency (LF) noise behavior of Si NMOSTs stressed at 4.2 K is investigated and compared with the stress-induced changes in the DC parameters. In linear operation, a reduction of the noise spectral density is observed, which can be explained by considering the reduction in the device transconductance. The excess noise, typically observed in the kink region, is reduced after stress, as is the noise hysteresis. This behaviour can be understood by substituting the changes in the substrate current characteristic in the excess-noise model derived

Keywords

elemental semiconductors; insulated gate field effect transistors; semiconductor device models; semiconductor device noise; silicon; 4.2 K; DC parameters; LF noise behaviour; NMOSTs; Si; device transconductance; excess-noise model; kink region; noise hysteresis; noise spectral density; stress-induced changes; substrate current characteristic; CMOS technology; Low-frequency noise; MOSFETs; Noise generators; Noise measurement; Noise reduction; Semiconductor device modeling; Stress; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.216435

Filename

216435