Title :
Single-grain Si TFTs with ECR-PECVD gate SiO2
Author :
Ishihara, Ryoichi ; Hiroshima, Yasushi ; Abe, Daisuke ; Van Dijk, Barry D. ; Van der Wilt, Paul C. ; Higashi, Seiichiro ; Inoue, Satoshi ; Shimoda, Tatsuya ; Metselaar, J.W. ; Beenakker, C.I.M.
Author_Institution :
Fac. of Electr. Eng., Math. & Comput. Sci., Delft Univ. of Technol., Netherlands
fDate :
3/1/2004 12:00:00 AM
Abstract :
High-performance Si thin-film transistors (TFTs) are fabricated inside a single, location-controlled grain with gate SiO2 deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). The position of the large grains is controlled by μ-Czochralski (grain-filter) process with excimer-laser crystallization. Owing to the low interface trap density of ECR-PECVD SiO2 the single-grain Si TFTs showed a smaller subthreshold swing of 0.45 V/decade, in addition to a higher field-effect mobility for electrons of 460 cm2/Vs than that with low-pressure chemical-vapor deposited (LPCVD) SiO2.
Keywords :
crystallisation; elemental semiconductors; grain boundaries; laser materials processing; plasma CVD; semiconductor junctions; silicon; silicon compounds; thin film transistors; ECR-PECVD gate; SiO2-Si; crystal growth; dielectric materials; electron cyclotron resonance plasma enhanced chemical vapor deposition; electron mobility; excimer-laser crystallization; grain-filter process; location-controlled grain; low interface trap density; low-pressure chemical-vapor deposition; pi-Czochralski process; silicon TFTs; single-grain; subthreshold swing; thin-film transistors; Chemical vapor deposition; Crystallization; Cyclotrons; Electrons; Plasma chemistry; Plasma density; Plasma temperature; Resonance; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.823326
