Static-noise margin analysis of MOS SRAM cells

Author

Seevinck, Evert ; List, Frans J. ; Lohstroh, Jan

Volume

22

Issue

5

fYear

1987

fDate

10/1/1987 12:00:00 AM

Firstpage

748

Lastpage

754

Abstract

The stability of both resistor-load (R-load) and full-CMOS SRAM cells is investigated analytically as well as by simulation. Explicit analytic expressions for the static-noise margin (SNM) as a function of device parameters and supply voltage are derived. The expressions are useful in predicting the effect of parameter changes on the stability as well as in optimizing the design of SRAM cells. An easy-to-use SNM simulation method is presented, the results of which are in good agreement with the results predicted by the analytic SNM expressions. It is further concluded that full-CMOS cells are much more stable than R-local cells at a low supply voltage.

Keywords

CMOS integrated circuits; Electron device noise; Field effect integrated circuits; Integrated memory circuits; Random-access storage; Stability; electron device noise; field effect integrated circuits; integrated memory circuits; random-access storage; stability; Analytical models; Circuit simulation; Design optimization; Flip-flops; Inverters; Low voltage; Metastasis; Predictive models; Random access memory; Stability analysis;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1987.1052809

Filename

1052809