Title :
Diffusion capacitance and laser diodes
Author :
Strologas, John ; Hess, Karl
Author_Institution :
Phys. Dept., Univ. of Illinois, Urbana, IL, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
The well-known diffusion capacitance is critical in determining the modulation response of p-n junctions and particularly of laser diodes. In this brief, we investigate the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region. We show that diode length and lifetime together, and not just the lifetime (which is well known), determine the bandwidth of the diode.
Keywords :
capacitance; p-n junctions; semiconductor device measurement; semiconductor device models; semiconductor diodes; semiconductor junctions; semiconductor lasers; carrier lifetime; carrier lifetimes; depletion capacitance; diffusion capacitance; diode bandwidth; diode length; laser diodes; modulation response; narrow active region; p-n junctions; Assembly; Capacitance; Diode lasers; Fabrication; Nanocrystals; Nanoparticles; Nonhomogeneous media; Polymer films; Self-assembly; Surface resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.822345
