DocumentCode :
903390
Title :
Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnections
Author :
Trattles, J.T. ; O´Neill, A.G. ; Mecrow, B.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Newcastle-upon-Tyne Univ., UK
Volume :
40
Issue :
7
fYear :
1993
fDate :
7/1/1993 12:00:00 AM
Firstpage :
1344
Lastpage :
1347
Abstract :
Multilevel interconnection vias are investigated using a coupled thermal and electrical conduction model in three dimensions and the finite-element method. The concept of using a volume to quantify current crowding is introduced. Close to a contact via it is found that the peak temperature moves between the upper track and the via as a function of geometry
Keywords :
VLSI; finite element analysis; metallisation; VLSI multilevel interconnections; coupled thermal/electrical conduction model; current crowding; finite-element method; geometry; interconnection vias; peak temperatures; Current density; Equations; Finite element methods; Geometry; Heating; Integrated circuit interconnections; Proximity effect; Temperature dependence; Thermal conductivity; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.216444
Filename :
216444
Link To Document :
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