Title :
Large-signal characterization of dual-gate field effect transistors using load-pull measurements
Author :
Drury, Denis M. ; Zimmermann, David C. ; Davis, W. Alan
Author_Institution :
Texas Instrum., Dallas, TX, USA
fDate :
2/1/1993 12:00:00 AM
Abstract :
An automated injected signal load-pull measurement system has been designed to operate from 8 to 12 GHz, with a range of injected signal power extending to 4 W. The system has been shown to be as accurate as the HP8510 network analyzer. The large signal intrinsic drain-to-source resistance of an 1800 μm dual-gate FET was measured on the load-pull system, and subsequently a variable power amplifier was designed using the load-pull data. The output phase variation of the variable power amplifier was 10° when operating at 31.3 dBm
Keywords :
automatic testing; field effect transistors; microwave measurement; semiconductor device testing; solid-state microwave devices; 1800 micron; 4 W; 8 to 12 GHz; SHF; automated measurement system; dual-gate FET; field effect transistors; injected signal; intrinsic drain-to-source resistance; large signal characterisation; load-pull measurements; Electrical resistance measurement; FETs; Gallium arsenide; Impedance measurement; Measurement techniques; Phase measurement; Power amplifiers; Power measurement; Signal design; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
