Title :
Extraction of device noise sources from measured data using circuit simulator software
Author :
Ikalainen, Pertti K.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
fDate :
2/1/1993 12:00:00 AM
Abstract :
A procedure is presented for extracting the properties of device noise sources from experimental data. The extraction procedure can be implemented using commercially available circuit simulators. An example concerning a low-noise pseudomorphic high-electron-mobility transistor (HEMT) shows that the two noise sources extracted from experimental data are largely uncorrelated provided that parasitic elements are de-embedded from the measurement and that the sources are extracted in H-parameter format
Keywords :
electronic engineering computing; equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; solid-state microwave devices; H-parameter format; HEMT; circuit simulator software; device noise sources; extraction procedure; low-noise; measured data; pseudomorphic high-electron-mobility transistor; Admittance; Circuit noise; Circuit simulation; Data mining; Equations; Noise figure; Noise measurement; Scattering parameters; Software measurement; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
