DocumentCode
903724
Title
Extraction of device noise sources from measured data using circuit simulator software
Author
Ikalainen, Pertti K.
Author_Institution
Texas Instruments Inc., Dallas, TX, USA
Volume
41
Issue
2
fYear
1993
fDate
2/1/1993 12:00:00 AM
Firstpage
340
Lastpage
343
Abstract
A procedure is presented for extracting the properties of device noise sources from experimental data. The extraction procedure can be implemented using commercially available circuit simulators. An example concerning a low-noise pseudomorphic high-electron-mobility transistor (HEMT) shows that the two noise sources extracted from experimental data are largely uncorrelated provided that parasitic elements are de-embedded from the measurement and that the sources are extracted in H -parameter format
Keywords
electronic engineering computing; equivalent circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; solid-state microwave devices; H-parameter format; HEMT; circuit simulator software; device noise sources; extraction procedure; low-noise; measured data; pseudomorphic high-electron-mobility transistor; Admittance; Circuit noise; Circuit simulation; Data mining; Equations; Noise figure; Noise measurement; Scattering parameters; Software measurement; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.216478
Filename
216478
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