Wide-band, low-noise, matched-impedance amplifiers in submicrometer MOS technology

Author

Toh, Kai-yap ; Meyer, Robert G. ; Soo, David C. ; Chin, Gen M. ; Voshchenkov, Andalexander M.

Volume

22

Issue

6

fYear

1987

fDate

12/1/1987 12:00:00 AM

Firstpage

1031

Lastpage

1040

Abstract

Circuit design techniques for realizing wideband, low-noise, matched-impedance amplifiers in submicrometer MOS technology are discussed. A circuit configuration with two feedback loops has been fabricated in an experimental 1-μm NMOS technology. The fabricated amplifier has an insertion gain of 16.35 dB, a -3-dB bandwidth of 758 MHz, a maximum input voltage standing-wave ratio (VSWR) of 2.45, a maximum output VSWR of 1.60, and an average noise figure of 6.7 dB (with reference to a 50-μm source resistance) from 10 to 758 MHz.

Keywords

Equivalent circuits; Feedback; Field effect integrated circuits; Impedance matching; Linear integrated circuits; Network synthesis; Radiofrequency amplifiers; Ultra-high-frequency amplifiers; Wideband amplifiers; equivalent circuits; feedback; field effect integrated circuits; impedance matching; linear integrated circuits; network synthesis; radiofrequency amplifiers; ultra-high-frequency amplifiers; wideband amplifiers; Bandwidth; Broadband amplifiers; Circuit synthesis; Feedback circuits; Feedback loop; Gain; Low-noise amplifiers; MOS devices; Noise figure; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1987.1052852

Filename

1052852