Title :
A 12-bit 1-Gword/s GaAs digital-to-analog converter system
Author :
Hsieh, Kuo-Chiang ; Knotts, Thomas A. ; Baldwin, Gary L. ; Hornak, Thomas
fDate :
12/1/1987 12:00:00 AM
Abstract :
The circuitry for a 12-b 1-Gword/s digital-to-analog converter (DAC) IC is described. A DC linearity of ±1/8 LSB has been preserved with this all-depletion GaAs MESFET chip. Dynamic measurements in the frequency domain indicate nonlinearities of less than -62 dBc at a 1-GHz clock rate. The DAC uses a very fast FET analog current switch that exhibits sufficiently low leakage currents for a 12-b linearity. The limited on-chip matching capabilities require the precision DC currents to be generated external to the GaAs chip. A current-switching DAC that partitions the high-speed functions onto a single GaAs chip while the high-precision bit currents are realized off-chip is described. The GaAs chip contains 12 1-b cells, each of which switches an analog bit current into a single sampler circuit that is shared by all the switches. The sampler is used to increase the dynamic linearity in the DAC.
Keywords :
Digital integrated circuits; Digital-analogue conversion; Field effect integrated circuits; Gallium arsenide; III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; digital-analogue conversion; field effect integrated circuits; gallium arsenide; Digital integrated circuits; Digital-analog conversion; Frequency measurement; Gallium arsenide; Linearity; MESFETs; Nonlinear dynamical systems; Semiconductor device measurement; Switches; Switching circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052854