Title :
Charge injection in analog MOS switches
Author :
Wegmann, George ; Vittoz, Eric A. ; Rahali, Fouad
fDate :
12/1/1987 12:00:00 AM
Abstract :
Charge injection in MOS analog switches, also called pass transistors or transmission gates, is approached by using the continuity equation. Experimental results show the negligible influence of substrate current which leads to a unidimensional model. An easy-to-handle simplified model is deduced and its predictions compared to the injection obtained by measurements. It is shown that this model, which can be used to implement various strategies to reduce charge injection, is valid in any realistic situation.
Keywords :
Field effect integrated circuits; Semiconductor device models; Switched networks; Switching circuits; field effect integrated circuits; semiconductor device models; switched networks; switching circuits; Capacitance; Equations; MOSFETs; Modems; Predictive models; Sampling methods; Switched capacitor circuits; Switches; Switching circuits; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052859
