Title :
Linear model for high-frequency transistors for different bias
Author :
Kumar, K. Bharath ; Pandharipande, V.M.
fDate :
12/1/1987 12:00:00 AM
Abstract :
A linear model for three high-frequency transistors is presented. The model shows good agreement between measured and simulated Y-parameters at different collector currents for all the three transistors.
Keywords :
Semiconductor device models; Transistors; semiconductor device models; transistors; Capacitance; Circuit simulation; Computational modeling; Computer simulation; Electrons; Frequency; Low-frequency noise; Mathematical model; Radar; Semiconductor device noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052879
