DocumentCode
904170
Title
An evaporated heterojunction diode strain sensor
Author
Moore, R. Max
Volume
57
Issue
4
fYear
1969
fDate
4/1/1969 12:00:00 AM
Firstpage
735
Lastpage
736
Abstract
Using a new device concept, a unique semiconductor strain sensor has been demonstrated in the laboratory. It is a p-n heterojunction diode which is fabricated by vacuum evaporation techniques directly onto flexible substrate. This sensor´s mechanical input properties are controlled by the choice of substrate, and it has a low-impedance voltage source output characteristic.
Keywords
Capacitive sensors; Heterojunctions; Laboratories; Mechanical factors; Mechanical sensors; Semiconductor diodes; Sensor phenomena and characterization; Substrates; Vacuum technology; Voltage control;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7060
Filename
1448990
Link To Document