DocumentCode :
904170
Title :
An evaporated heterojunction diode strain sensor
Author :
Moore, R. Max
Volume :
57
Issue :
4
fYear :
1969
fDate :
4/1/1969 12:00:00 AM
Firstpage :
735
Lastpage :
736
Abstract :
Using a new device concept, a unique semiconductor strain sensor has been demonstrated in the laboratory. It is a p-n heterojunction diode which is fabricated by vacuum evaporation techniques directly onto flexible substrate. This sensor´s mechanical input properties are controlled by the choice of substrate, and it has a low-impedance voltage source output characteristic.
Keywords :
Capacitive sensors; Heterojunctions; Laboratories; Mechanical factors; Mechanical sensors; Semiconductor diodes; Sensor phenomena and characterization; Substrates; Vacuum technology; Voltage control;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7060
Filename :
1448990
Link To Document :
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