Title :
A new complementary bipolar transistor structure
Author :
Su, Stephen C. ; Meindl, James D.
Abstract :
A novel complementary monolithic bipolar transistor structure has been developed. By adding one extra diffusion to the standard monolithic bipolar transistor process, a complementary pair of high current gain and very low saturation resistance n-p-n and p-n-p transistors can be fabricated on the same chip. High sheet resistances are also present in this structure. Novel low-voltage (1.3 V) complementary digital circuits have been fabricated by this new process.
Keywords :
Bipolar transistors; Digital integrated circuits; Monolithic integrated circuits; bipolar transistors; digital integrated circuits; monolithic integrated circuits; Bipolar transistors; Circuit optimization; Digital circuits; Epitaxial layers; Fabrication; Logic gates; Monolithic integrated circuits; Resistors; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1052892
