DocumentCode :
904433
Title :
De behavior of Si diodes in magnetic fields
Author :
Kitchen, W.J., Jr.
Volume :
57
Issue :
5
fYear :
1969
fDate :
5/1/1969 12:00:00 AM
Firstpage :
802
Lastpage :
803
Abstract :
The effect of applying a transverse magnetic field on forward biased Si p-n junctions is investigated, and the results obtained suggest the possibility of employing magnetic measurements to evaluate the physical properties of semiconductor devices.
Keywords :
Magnetic field measurement; Magnetic fields; Magnetic materials; Magnetic properties; Resistors; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7080
Filename :
1449010
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=904433
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