DocumentCode
904664
Title
An Approximate Comparison Between n+-p-p+ and p+-n-n+ Silicon TRAPATT Diodes (Short Papers)
Author
Haddad, G.I. ; Lee, C.M. ; Schroeder, W.E.
Volume
21
Issue
7
fYear
1973
fDate
7/1/1973 12:00:00 AM
Firstpage
501
Lastpage
502
Abstract
The difference in the ionization rates of holes and electrons in Si results in different properties of n+-p-p+ and p+-n-n+ TRAPATT diodes. An approximate analysis is presented which shows these differences and indicates superior performance in the n+-p-p+ structure.
Keywords
Current density; Diodes; Electron traps; Microwave antennas; Microwave theory and techniques; Performance analysis; Rectangular waveguides; Silicon; Slot antennas; Voltage control;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1973.1128046
Filename
1128046
Link To Document