Characteristics of GaAs graded-period delta-doped superlattice

Author

Liu, Wen-Chau ; Sun, Chung-Yih ; Lour, Wen-Shiung

Author_Institution

Dept. of Electr. Eng., Nat. Chen-Kung Univ., Tainan, Taiwan

Volume

138

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

629

Lastpage

632

Abstract

In the paper, the characteristics of a GaAs graded-period delta-doped superlattice grown by molecular beam epitaxy are studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurs both at 300 K and 77 K. An N-shaped NDC due to the temperature-induced tunnelling effect is observed at 300 K. In addition, a two-state avalanche multiplication process, i.e. a middle quasistable region, is seen at 77 K. Finally, there is an interesting hysteresis phenomenon due to the trapped holes created by the avalanche multiplications

Keywords

III-V semiconductors; gallium arsenide; hole traps; hysteresis; impact ionisation; molecular beam epitaxial growth; negative resistance effects; semiconductor doping; semiconductor epitaxial layers; semiconductor superlattices; tunnelling; 300 K; 77 K; GaAs; N-shaped NDC; S-shaped negative differential conductivity; delta-doped superlattice; graded period superlattice; hysteresis phenomenon; molecular beam epitaxy; quasistable region; temperature-induced tunnelling effect; trapped holes; two-state avalanche multiplication process;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

105353