• DocumentCode
    904714
  • Title

    Excess current in p--n junctions associated with surface states

  • Author

    Esteve, Daniel

  • Author_Institution
    CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
  • Volume
    4
  • Issue
    15
  • fYear
    1968
  • Firstpage
    305
  • Lastpage
    307
  • Abstract
    Surface effects are known to cause excess currents in p--n junctions. A quantitative model is proposed which shows that the essential contribution can be related to surface recombination velocity. An apparent exp (V/mUT) dependence is found for this current component.
  • Keywords
    p-n junctions; semiconductor junctions; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680237
  • Filename
    4233485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=904714