Title :
Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f.
Author :
Leupp, A. ; Strutt, M.J.O.
Author_Institution :
Swiss Federal Institute of Technology, Department of Advanced Electrical Engineering, Zÿrich, Switzerland
Abstract :
The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1¿0.8 GHz are given.
Keywords :
noise; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680242
