• DocumentCode
    904900
  • Title

    Low-frequency noise in Schottky-barrier diodes

  • Author

    Anand, Y.

  • Volume
    57
  • Issue
    5
  • fYear
    1969
  • fDate
    5/1/1969 12:00:00 AM
  • Firstpage
    855
  • Lastpage
    856
  • Abstract
    Silicon Schottky-barrier diodes have been developed which simulate the performance of point-contact (1N23WE) diodes in the standard mounts. These diodes along with 1N23 point-contact and back diodes were examined under 9.375 GHz excitation for noise temperature over the IF range of 5 kHz to 180 kHz. The Schottky diodes had noise temperatures comparable to and often lower than the back diodes. This fact, together with lower conversion loss and convenient impedance levels, makes the Schottky-barrier diodes generally advantageous in Doppler radars and similar applications.
  • Keywords
    1f noise; Electrical resistance measurement; Laser radar; Low-frequency noise; Noise figure; Noise measurement; Resistors; Schottky diodes; Signal to noise ratio; Temperature;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7124
  • Filename
    1449054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=904900