DocumentCode
904978
Title
Hyperabrupt junctions in Au-Si Schottky diodes by ion implantation
Author
Brook, P. ; Whitehead, C.S.
Author_Institution
Services Electronics Research Laboratory, Baldock, UK
Volume
4
Issue
16
fYear
1968
Firstpage
335
Lastpage
337
Abstract
The application of ion implantation to the fabrication of Au-Si Schottky diodes with highly nonlinear capacitance/voltage characteristics is described. The capacitance/voltage characteristic and the derived impurity profile are given for a typical diode. The forward current/voltage characteristics are described, and an estimate of Au-Si barrier height is made.
Keywords
semiconductor diodes; semiconductor junctions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19680262
Filename
4233511
Link To Document