Title :
Hyperabrupt junctions in Au-Si Schottky diodes by ion implantation
Author :
Brook, P. ; Whitehead, C.S.
Author_Institution :
Services Electronics Research Laboratory, Baldock, UK
Abstract :
The application of ion implantation to the fabrication of Au-Si Schottky diodes with highly nonlinear capacitance/voltage characteristics is described. The capacitance/voltage characteristic and the derived impurity profile are given for a typical diode. The forward current/voltage characteristics are described, and an estimate of Au-Si barrier height is made.
Keywords :
semiconductor diodes; semiconductor junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680262
