Title :
Gbit/s serialiser/deserialiser subsystem for GaAs large-scale optoelectronic integration
Author_Institution :
IBM Res. Div., Zurich Res. Lab., Ruschlikon, Switzerland
fDate :
8/1/1989 12:00:00 AM
Abstract :
A 10:1 serialiser/deserialiser subsystem with fast byte synchronisation and link control functions has been designed. The subsystem, consisting of 1030 gates, was implemented on GaAs using a refractory-gate MESFET process and is part of an optoelectronic transmitter/receiver chip set for fibre-optic computer communication links. An operating speed of 1 Gbit/s was achieved with a power dissipation of only 1.2 W.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; data communication equipment; digital communication systems; field effect integrated circuits; gallium arsenide; integrated logic circuits; integrated optoelectronics; optical communication equipment; synchronisation; 1 Gbit/s; 1.2 W; GaAs; Gbit/s; III-V semiconductors; digital transmission; fast byte synchronisation; fibre-optic computer communication links; large-scale optoelectronic integration; link control functions; logic circuit; optical communication equipment; optoelectronic transmitter/receiver chip; power dissipation; refractory-gate MESFET process; serialiser/deserialiser subsystem;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
