DocumentCode
905059
Title
Oxide-thickness determination from C/V measurement in an MOS capacitor
Author
Sarrabayrouse, G. ; Campabadal, F. ; Prom, J.L.
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Volume
136
Issue
4
fYear
1989
fDate
8/1/1989 12:00:00 AM
Firstpage
215
Lastpage
216
Abstract
A method is proposed to evaluate the oxide thickness in an MOS structure from C/V measurements. A comparison with TEM measurements is given.
Keywords
capacitors; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; semiconductor device testing; thickness measurement; C/V measurement; MOS capacitor; oxide thickness;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
216649
Link To Document