Title :
Conduction in ohmic region of submicrometre MOSFET
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong
fDate :
10/1/1989 12:00:00 AM
Abstract :
An accurate method to evaluate the variation of inversion charge along the channel, including the effect of lateral field from the source and drain, has been applied to find the current in the ohmic region of a submicrometre MOSFET. The model can explain the observed maximum in the normalised transconductance (gmL) as the channel length is reduced. The final rapid degradation of gmL is due to the overlapping of the depletion regions of the source and drain junctions. It is not necessary to assume an inhomogeneous surface state density.
Keywords :
insulated gate field effect transistors; semiconductor device models; channel length; depletion regions overlap; inversion charge; lateral field; model; normalised transconductance; ohmic region; submicrometre MOSFET; submicron semiconductor device;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
