DocumentCode
905179
Title
Conduction in ohmic region of submicrometre MOSFET
Author
Tong, K.Y.
Author_Institution
Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong
Volume
136
Issue
5
fYear
1989
fDate
10/1/1989 12:00:00 AM
Firstpage
260
Lastpage
262
Abstract
An accurate method to evaluate the variation of inversion charge along the channel, including the effect of lateral field from the source and drain, has been applied to find the current in the ohmic region of a submicrometre MOSFET. The model can explain the observed maximum in the normalised transconductance (gmL) as the channel length is reduced. The final rapid degradation of gmL is due to the overlapping of the depletion regions of the source and drain junctions. It is not necessary to assume an inhomogeneous surface state density.
Keywords
insulated gate field effect transistors; semiconductor device models; channel length; depletion regions overlap; inversion charge; lateral field; model; normalised transconductance; ohmic region; submicrometre MOSFET; submicron semiconductor device;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
216663
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