Title :
Thermal resistance of gallium-arsenide field-effect transistors
Author :
Webb, P.W. ; Russell, I.A.D.
Author_Institution :
Sch. of Electron. & Electr. Eng., Birmingham Univ., UK
fDate :
10/1/1989 12:00:00 AM
Abstract :
The authors describe some thermal simulations for heat flow in gallium-arsenide field-effect transistors where the effects of surface metallisation and via holes are modelled. The results were found to be significantly different to those previously published, which were based on simpler physical models. The effects of surface metallisation were found to be important in modelling the thermal resistance, but the effects of via holes less so, using current technological limitations.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; heat transfer; metallisation; semiconductor device models; thermal analysis; thermal resistance; GaAs; III-V semiconductors; field-effect transistors; heat flow; modelling; surface metallisation; thermal resistance; thermal simulations; via holes;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
