DocumentCode :
905282
Title :
Modelling of crosstalk among the GaAs-based VLSI interconnections
Author :
Goel, A.K. ; Huang, Y.R.
Author_Institution :
Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
Volume :
136
Issue :
6
fYear :
1989
fDate :
12/1/1989 12:00:00 AM
Firstpage :
361
Lastpage :
368
Abstract :
The authors have developed a computer-efficient model and carried out computer simulations of the crosstalk effects in single, bi- and trilevel high-density interconnections on GaAs-based VHSIC. The self and coupling interconnection capacitances used in the model have been determined by a network analogue method developed for finite-length interconnections, open substrates and finite dimensions of the bottom ground plane, as well as by the method of moments in conjunction with a Green´s function appropriate for the geometry of the interconnections. Related software modules have been developed and run successfully on mainframe computers. For a given set of the interconnection dimensions and other parameters, the algorithm takes less than 5 minutes of computer processing time on a mainframe computer. The modules have been used to study the dependence of the crosstalk voltage on the interconnection dimensions such as their lengths, widths, separations and the interlevel distances.
Keywords :
Green´s function methods; III-V semiconductors; VLSI; circuit analysis computing; crosstalk; digital integrated circuits; gallium arsenide; integrated circuit technology; metallisation; semiconductor device models; GaAs; Green´s function; III-V semiconductors; VHSIC; VLSI interconnections; bilevel type; computer simulations; computer-efficient model; coupling interconnection capacitances; crosstalk; digital IC; driving transistor resistance; finite-length interconnections; interconnection dimensions; load capacitance; moments method; network analogue method; open substrates; self capacitance; single-level type; software modules; trilevel high-density interconnections;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
Publisher :
iet
ISSN :
0956-3768
Type :
jour
Filename :
216678
Link To Document :
بازگشت