Title :
Method for determination of parasitic resistances in microwave power MESFETs
Author_Institution :
Dept. of Electr. Eng., Queensland Univ., St. Lucia, Qld., Australia
fDate :
12/1/1989 12:00:00 AM
Abstract :
A novel method of determining the source and drain series parasitic resistances of the MESFET is presented. This method is particularly suited to power devices since it eliminates the necessity to operate the Schottky gate with high forward bias. In addition, the values of parasitic resistances extracted from low-frequency measurements are confirmed at microwave frequencies.
Keywords :
Schottky gate field effect transistors; electric resistance; equivalent circuits; power transistors; semiconductor device models; solid-state microwave devices; Schottky gate; drain series resistance; equivalent circuit; microwave power MESFETs; model; parasitic resistances; source series resistance;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
