DocumentCode
905293
Title
Method for determination of parasitic resistances in microwave power MESFETs
Author
Eccleston, K.W.
Author_Institution
Dept. of Electr. Eng., Queensland Univ., St. Lucia, Qld., Australia
Volume
136
Issue
6
fYear
1989
fDate
12/1/1989 12:00:00 AM
Firstpage
358
Lastpage
360
Abstract
A novel method of determining the source and drain series parasitic resistances of the MESFET is presented. This method is particularly suited to power devices since it eliminates the necessity to operate the Schottky gate with high forward bias. In addition, the values of parasitic resistances extracted from low-frequency measurements are confirmed at microwave frequencies.
Keywords
Schottky gate field effect transistors; electric resistance; equivalent circuits; power transistors; semiconductor device models; solid-state microwave devices; Schottky gate; drain series resistance; equivalent circuit; microwave power MESFETs; model; parasitic resistances; source series resistance;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
216679
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