Title :
Microwave amplification with GaAs avalanche diodes
Author :
Kuno, H.J. ; Collard, J.R. ; Gobat, A.
Author_Institution :
Radio Corporation of America, Microwave Applied Research Laboratory, David Sarnoff Research Center, Princeton, USA
Abstract :
Experimental results obtained with an Xband reflection amplifier using vapour-phase epitaxial GaAs p¿n junctions biased into avalanche breakdown are presented. Single-side-band noise figures of 17dB, power gains in excess of 30dB, and a high dynamic range have been repeatedly measured. The noise figures obtained with a large number of these diodes are significantly lower than those reported for Si or Ge diodes.
Keywords :
amplifiers; avalanche diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680421
