DocumentCode
905372
Title
A Two-Stage IMPATT-Diode Amplifier
Author
Willing, Harry A.
Volume
21
Issue
11
fYear
1973
fDate
11/1/1973 12:00:00 AM
Firstpage
707
Lastpage
716
Abstract
The system aspects and packaging of a two-stage FM IMPATT-diode amplifier are described. The amplifier combines the output power of 4 IMPATT diodes in the final stage to provide an output power of greater than 4 W at 6 GHz. The system has a locking bandwidth of greater than 200 MHz with a 16-dB gain and a noise figure of less than 50 dB. Both the design and the experimental performance of the amplifier and each of its stages are discussed. The noise characterization of IMPATT-diode amplifiers, operating as injection-locked oscillators or stable amplifiers, determined the mode of operation for each stage. Included in the paper are experimental results of large-signal noise characterization of both Si and GaAs IMPATT diodes, as are the noise characteristics related to the output power and gain.
Keywords
Coaxial components; Diodes; Driver circuits; Gallium arsenide; Operational amplifiers; Packaging; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1973.1128114
Filename
1128114
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