DocumentCode
905513
Title
High-efficiency microwave oscillations from Si avalanche diodes
Author
Grace, M.I. ; Gibbons, G.
Author_Institution
Sperry Rand Research Center, Sudbury, USA
Volume
4
Issue
25
fYear
1968
Firstpage
564
Lastpage
565
Abstract
High-efficiency microwave oscillations have been observed in Si p¿n and p¿n¿n+ diodes under pulsed conditions. At about 25 mA reverse-bias current, a sudden decrease in voltage across the diode and an increase in bias current are observed, giving peak output power of 10¿20 W and efficiency up to 30% between 1 and 3 GHz.
Keywords
avalanche diodes; microwave generation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19680437
Filename
4233564
Link To Document