Title :
Electric conduction in float-zone silicon after prolonged gamma irradiation
Author :
KAO, K.W. ; Pal, N.
Author_Institution :
University of Manitoba, Department of Electrical Engineering, Winnipeg, Canada
Abstract :
The electric conductivities of float-zone silicon doped with arsenic for ntype and with boron for ptype have been measured before and after gamma irradiation using a four-point probe. Some new phenomena after prolonged irradiation are reported, and a brief discussion is given.
Keywords :
electrical conductivity of solids; elemental semiconductors; gamma-ray effects; radiation effects; semiconductor materials;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680442
