DocumentCode :
905575
Title :
Sensitivity Dependence of the Planar Hall Effect Sensor on the Free Layer of the Spin-Valve Structure
Author :
Hung, T.Q. ; Oh, S.J. ; Tu, B.D. ; Duc, N.H. ; Phong, L.V. ; Anandakumar, S. ; Jeong, J.-R. ; Kim, C.G.
Author_Institution :
Dept. of Mater. Sci. & Eng., Chungnam Nat. Univ., Daejeon
Volume :
45
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
2374
Lastpage :
2377
Abstract :
Planar Hall effect (PHE) sensors with the junction size of 50 mum times 50 mum were fabricated successfully by using spin-valve thin films Ta(5)/NiFe(x) /Cu(1.2)/NiFe(2)/IrMn(15)/Ta(5) (nm) with x = 4, 8, 10, 12, 16. The magnetic field sensitivity of the PHE sensors increases with increasing thickness of ferromagnetic (FM) free layer. The sensitivity of about 95.5 m Omega/(kA/m) can be obtained when the thickness of the FM-free layer increases up to 16 nm. The enhancement of sensitivity is explained by the shunt current from other layers. The PHE profiles are well described in terms of the Stoner-Wohlfarth energy model. The detection of magnetic micro-beads label Dynabeadsreg M-280 is demonstrated and the results revealed that the sensor is feasible for high-resolution biosensor applications.
Keywords :
Hall effect; ferromagnetic materials; iridium alloys; iron alloys; magnetic sensors; magnetic thin films; manganese alloys; nickel alloys; spin valves; tantalum; thin film sensors; PHE sensors; Stoner-Wohlfarth energy model; Ta-NiFe-Cu-NiFe-IrMn-Ta; ferromagnetic layer thickness; high-resolution biosensor; label Dynabeads M-280; magnetic field sensitivity; magnetic microbeads; planar Hall effect sensor; shunt current; spin-valve structure; spin-valve thin films; Biosensor applications; high field sensitivity; micro-beads detection; planar Hall effect;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2009.2018578
Filename :
4957684
Link To Document :
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