Abstract :
A nonvolatile integrated metal-nitride-oxide-silicon (MNOS) word organized memory was fabricated. The salient features of this integrated storage array are 1) WRITE cycle 2.0 microseconds, READ cycle 500 nanoseconds, 2) WRITE voltage ± 25V, 3) single device per storage bit, 4) MOS driving circuitry with no isolation between MOS and MNOS devices on the same chip, and 5) nonvolatile storage of information.
