DocumentCode
905607
Title
An integrated metal-nitride-oxide-silicon (MNOS) memory
Author
Frohman-Bentchkowsky, D.
Volume
57
Issue
6
fYear
1969
fDate
6/1/1969 12:00:00 AM
Firstpage
1190
Lastpage
1192
Abstract
A nonvolatile integrated metal-nitride-oxide-silicon (MNOS) word organized memory was fabricated. The salient features of this integrated storage array are 1) WRITE cycle 2.0 microseconds, READ cycle 500 nanoseconds, 2) WRITE voltage ± 25V, 3) single device per storage bit, 4) MOS driving circuitry with no isolation between MOS and MNOS devices on the same chip, and 5) nonvolatile storage of information.
Keywords
Circuits; Electron devices; Equations; Finite wordlength effects; Hysteresis; Nanoscale devices; Nonvolatile memory; Time factors; Transient response; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7185
Filename
1449115
Link To Document