Title :
A 1550-nm millimeter-wave photodetector with a bandwidth-efficiency product of 2.4 THz
Author_Institution :
BT Lab., Ipswich, UK
fDate :
7/1/1992 12:00:00 AM
Abstract :
The monolithic integration of an optical preamplifier and a waveguide p-i-n photodiode has resulted in a 1550-nm photodetector having an external quantum efficiency of 72 (a responsivity of 89 A/W) and an electrical bandwidth of 33.5 GHz. These figures combine to give a bandwidth efficiency product of 2.4 THz, which is approximately one hundred times higher than for any other type of millimeter-wave photodetector published to date. In addition, the preamplifier performance is supplemented by wide optical bandwidth (60 nm), low polarization sensitivity (1 dB), near traveling wave amplification (1-dB maximum gain ripple), and high saturated output power (+11 dBm). The principal advance over work reported earlier is the traveling wave operation of the monolithic optical preamplifier
Keywords :
integrated optoelectronics; optical waveguides; p-i-n diodes; photodetectors; photodiodes; semiconductor junction lasers; submillimetre wave devices; 1550 nm; 2.4 THz; 33.5 GHz; MM wave photodetectors; bandwidth-efficiency product; electrical bandwidth; external quantum efficiency; high saturated output power; low polarization sensitivity; maximum gain ripple; monolithic integration; near traveling wave amplification; optical preamplifier; preamplifier performance; responsivity; waveguide p-i-n photodiode; wide optical bandwidth; Bandwidth; Integrated optics; Monolithic integrated circuits; Optical saturation; Optical sensors; Optical waveguides; PIN photodiodes; Photodetectors; Preamplifiers; Stimulated emission;
Journal_Title :
Lightwave Technology, Journal of
