Title :
Small signal nonquasistatic models for GaAs field effect transistors for implementation in SPICE. II. Metal semiconductor field effect transistors (MESFETs)
Author :
Lin, H.-K. ; Abdel-Motaleb, I.M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
For pt.I see ibid., vol.138, no.6, p.735-48 (1991). A nonquasistatic model for GaAs metal semiconductor field effect transistors (MESFETs) is developed. The active distributed transmission line analogy is used to obtain frequency dependent Y-parameter relationships. Implementing the Y-parameters using R, L and C elements, a SPICE-like small signal equivalent circuit is built. This model can be used for the parasitic MESFETs of modulation doped field effect transistors (MODFETs) as well as regular MESFET structures
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; equivalent circuits; gallium arsenide; semiconductor device models; GaAs; MESFET; SPICE; Y-parameters; active distributed transmission line; field effect transistors; nonquasistatic model; small signal equivalent circuit;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
