Title :
Intervalley scattering model of the Gunn domain
Author :
Sz¿¿lely, V. ; Tarnay, K.
Author_Institution :
Technical University of Budapest, Chair for Electron Tubes & Semiconductors, Budapest, Hungary
Abstract :
The letter reports the analysis of Gunn-domain dynamics based on the intervalley scattering model. The numerical results show that the effect of intervalley scattering on the dynamic domain equilibrium is of the same order, or greater than, the effect of diffusion.
Keywords :
Gunn effect; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680462
