Title :
Single injection, double injection and negative resistance in gold-doped high-resistivity silicon
Author :
Wright, G.T. ; Ibrahim, A.F.
Author_Institution :
University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
Abstract :
A simplified explanation is given for negative resistance in a semiconductor containing deep-lying donor and acceptor levels. A simple equation is derived for the breakover voltage and is verified by experimental studies of single and double-injection currents in gold-doped silicon.
Keywords :
electrical conductivity of solids; elemental semiconductors; semiconductor materials;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680465
