Title :
Spin Interaction Effect on Potentiometric Measurements in a Quantum Well Channel
Author :
Park, Youn Ho ; Koo, Hyun Cheol ; Kim, Kyung Ho ; Kim, Hyung-jun ; Han, Suk-hee
Author_Institution :
Center for Spintronics Res., Korea Inst. of Sci. & Technol., Seoul
fDate :
6/1/2009 12:00:00 AM
Abstract :
Spin-orbit interaction induced magnetic field, which can arise from an asymmetry of the potential well, causes imbalance of carrier densities between spin-up and spin-down electrons. In the potentiometric measurement, the detected signal follows the magnetization status of the detection ferromagnet (FM1). In case of adding the neighboring ferromagnet (FM2), the measured potential is decided by both of FMs. When the magnitude of external field is between the coercive field of the FM1 and FM2, the detector reads the intermediate potential. The detector interacts with the neighboring ferromagnet and shows four levels of potential states.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; coercive force; ferromagnetic materials; field effect transistors; gallium arsenide; indium compounds; magnetic fields; magnetisation; semiconductor quantum wells; spin polarised transport; spin-orbit interactions; In0.53Ga0.47As; Rashba effect; carrier densities; ferromagnet; magnetization; potentiometric measurements; quantum well channel; spin interaction effect; spin-FET; spin-down electrons; spin-orbit interaction induced magnetic field; spin-up electrons; Potentiometric measurement; Rashba effect; quantum wells; spin-orbit interaction;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2009.2018584