Title :
High-voltage power transistors at high-level injection
fDate :
6/1/1969 12:00:00 AM
Abstract :
The characteristics of power transistors calculated in an earlier paper are also applicable to n-p-i-n structures.
Keywords :
Australia; Charge carrier processes; Electron mobility; Germanium; Impact ionization; Lattices; Phonons; Power transistors; Silicon; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1969.7214
