A high-speed eight-channel optoelectronic integrated receiver array comprising GaInAs p-i-n PD´s and AlInAs/GaInAs HEMTs

Author

Yano, Hiroshi ; Murata, Michio ; Sasaki, Goro ; Hayashi, Hideki

Author_Institution

Sumitomo Electric Industries Ltd., Yokohama, Japan

Volume

10

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

933

Lastpage

937

Abstract

The successful fabrication of an eight-channel optoelectronic integrated receiver array on an InP substrate, which comprises eighty elements including GaInAs p-i-n photodiodes (PDs) and AlInAs/GaInAs HEMTs, is reported. An average bandwidth of 1.2 GHz with a standard deviation of 190 MHz over the whole channel was obtained. An average responsivity was 546 V/W with a standard deviation of only 19.2 V/W. A crosstalk was less than -30 dB at frequencies between 3 and 900 MHz and as small as -28 dB even at 1 GHz. The yield of chips available for 1.0 Gb/s operation was as high as 62.5% over 2-in-diameter wafer

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n diodes; photodiodes; receivers; 1 Gbit/s; 1.2 GHz; 3 to 900 MHz; AlInAs-GaInAs; GaInAs; HEMTs; average bandwidth; average responsivity; crosstalk; high electron mobility transistors; high-speed eight-channel optoelectronic integrated receiver array; p-i-n photodiodes; semiconductors; Bandwidth; Crosstalk; Frequency; HEMTs; High speed optical techniques; Indium phosphide; MODFETs; Optical arrays; Optical crosstalk; Optical device fabrication; Optical interconnections; Optical receivers; PIN photodiodes; Photodetectors; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.144916

Filename

144916