DocumentCode
906215
Title
A microwave evaluation of the velocity-field characteristic in different regions of individual epitaxial gallium-arsenide layers
Author
Cohen, Laurent D.
Volume
57
Issue
7
fYear
1969
fDate
7/1/1969 12:00:00 AM
Firstpage
1299
Lastpage
1301
Abstract
The velocity (current)-electric field characteristic has been measured in different regions of individual epitaxial gallium-arsenide wafers by a high-power microwave technique. Epitaxial-n layers on semi-insulating substrates ranging in resistivity from approximately 0.5 to 5 Ω cm have been characterized. Trends in high-field microwave properties with normally specified low-field dc material properties are indicated.
Keywords
Bonding; Current measurement; Delay effects; Frequency; Gallium arsenide; Insertion loss; Magnetic field measurement; Magnetic materials; Material properties; Polarization;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7239
Filename
1449169
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