DocumentCode :
906245
Title :
High-power c.w. transferred-electron oscillators
Author :
Narayan, S.Y. ; Enstrom, R.E. ; Gobat, A.R.
Author_Institution :
RCA Microwave Applied Research Laboratory, David Sarnoff Research Center, Princeton, USA
Volume :
6
Issue :
1
fYear :
1970
Firstpage :
17
Lastpage :
18
Abstract :
C.W. operation of high-power transferred-electron oscillators (t.e.o.s) is described. A maximum power output of 0.78 W at 8.7 GHz with an efficiency of 2.5% was obtained. This is believed to be the highest c.w. power output reported to date for a single t.e.o. in this frequency range. This high-power output is attributed to improved fabrication technology leading to a thermal resistance of only 8 deg C/W for a 0.015×0.015 in chip.
Keywords :
microwave oscillators; semiconductor device manufacture;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19700011
Filename :
4234495
Link To Document :
بازگشت