• DocumentCode
    906249
  • Title

    Multilevel memory using single-electron turnstile

  • Author

    Nishiguchi, K. ; Inokawa, H. ; Ono, Y. ; Fujiwara, A. ; Takahashi, Y.

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Atsugi Kanagawa, Japan
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • Firstpage
    229
  • Lastpage
    230
  • Abstract
    A multilevel single-electron memory has been successfully demonstrated. Two fine gates with phase-shifted pulse voltages modulate potential barriers in a one-dimensional Si channel to transfer electrons one by one into a memory node, and the number of electrons in the node is sensed by a single-electron transistor.
  • Keywords
    MOS memory circuits; electric sensing devices; field effect transistors; single electron transistors; Si-SiO2; electron transfer; multilevel single-electron memory; one-dimensional Si channel; phase-shifted pulse voltages; potential barrier modulation; single-electron transistor.; single-electron turnstile;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040195
  • Filename
    1269473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906249