Title :
Transferred-electron negative-resistance amplifier
Author :
Hashizume, Nobuya ; Kataoka, S.
Author_Institution :
Ministry of International Trade & Industry, Electrotechnical Laboratory, Tokyo, Japan
Abstract :
It has experimentally been shown that the travelling domain oscillations in an n type GaAs bulk element can be suppressed by applying externally a large microwave-signal electric field. A computer calculation indicates a possibility of amplifying the signal when the element mounted in a stripline is subject to such a relatively large microwave signal.
Keywords :
microwave amplifiers; oscillations; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700021
