• DocumentCode
    906365
  • Title

    16 dB 80 GHz InGaP/GaAs HBT distributed amplifier

  • Author

    Arayashiki, Y. ; Ohkubo, Y. ; Amano, Y. ; Takagi, A. ; Ejima, M. ; Matsuoka, Y.

  • Author_Institution
    Res. Lab., Anritsu Corp., Atsugi, Japan
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • Firstpage
    244
  • Lastpage
    245
  • Abstract
    A high-gain and broadband distributed amplifier using high-performance high-reliability InGaP/GaAs HBTs is reported. A novel two-block configuration is used in gain cells in this distributed amplifier, which achieves a bandwidth of 80 GHz with a gain of 16 dB, resulting in a gain-bandwidth product of 504 GHz.
  • Keywords
    III-V semiconductors; distributed amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; wideband amplifiers; 16 dB; 504 GHz; 80 GHz; InGaP-GaAs; InGaP/GaAs HBT distributed amplifier; broadband distributed amplifier; gain cells; gain-bandwidth product; high-gain amplifier; high-performance high-reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040182
  • Filename
    1269483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906365