DocumentCode :
906439
Title :
Optimum design of thin-layer GaAs amplifiers
Author :
Dean, Robert H.
Volume :
57
Issue :
7
fYear :
1969
fDate :
7/1/1969 12:00:00 AM
Firstpage :
1327
Lastpage :
1328
Abstract :
A theoretical result shows that electron diffusion in thin-layer GaAs amplifiers produces a frequency of maximum gain which can be in the range of 1 to 100 GHz. This result is used to obtain a set of curves to aid in device design.
Keywords :
Conducting materials; Dielectric materials; Displays; Electrons; Frequency; Gallium arsenide; Geometry; Laplace equations; Poisson equations; Slabs;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7257
Filename :
1449187
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=906439
