Title :
D.C. numerical model for arbitrarily biased bipolar transistors in two dimensions
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
Abstract :
A method for the complete steady-state finite-difference solution of the most general form of the equations governing transistor action in two dimensions is proposed. Attention is drawn to certain computational difficulties and the means of overcoming them. Results of the method for a limited case are reported.
Keywords :
bipolar transistors; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700035
