DocumentCode
906553
Title
Extremely high power silicon p-i-n diode switch
Author
Stachejko, V.
Volume
57
Issue
7
fYear
1969
fDate
7/1/1969 12:00:00 AM
Firstpage
1340
Lastpage
1341
Abstract
An extremely high power silicon p-i-n diode switch was developed for operation over the 6 to 40 MHz frequency range. It was successfully tested at 4 MW peak power, and at 100 kW average power with 1000 µs pulsewidth in a balanced duplexer configuration.
Keywords
Capacitors; Heat sinks; Insertion loss; P-i-n diodes; Power semiconductor switches; Radio frequency; Semiconductor diodes; Silicon; Thermal resistance; Water heating;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7267
Filename
1449197
Link To Document