Title :
Preswitching behaviour of amorphous chalcogenide semiconductor films
Author :
Thomas, D.L. ; Warren, A.C.
Author_Institution :
Central Electricity Research Laboratories, Leatherhead, UK
Abstract :
The preswitching nonohmic behaviour of amorphous chalcogenide films is explained by Joule heating with heat flow both parallel and perpendicular to the current. Expressions relating the threshold voltage Vc to the band gap ¿E are consistent with measurements of I/V curves and Vc at elevated pressures; it is inferred that (¿¿E/¿P)¿¿6.6×10¿6 eV bar-1
Keywords :
semiconductor switches;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700040
