DocumentCode :
906565
Title :
On the relation between microwave series resistance, capacitance, and output power of IMPATT diodes
Author :
van Iperen, B.B. ; Tjassens, H. ; Goedbloed, J.J.
Volume :
57
Issue :
7
fYear :
1969
fDate :
7/1/1969 12:00:00 AM
Firstpage :
1341
Lastpage :
1342
Abstract :
Measurements at X-band of capacitance C, microwave series resistance R, and CW output power P, on Si IMPATT diodes with epitaxial layers of varying thickness are used to show that P = (constant)/(RC2). This relation is known from the large-signal theory of the ideal Read structure, but is found to be valid far beyond its theoretical limits.
Keywords :
Capacitance; Current measurement; Diodes; Electrical resistance measurement; Epitaxial layers; Microwave measurements; Power generation; Power measurement; Substrates; Thickness measurement;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7268
Filename :
1449198
Link To Document :
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