Title :
Analytical cascode model of buried-gate SiC MESFETs
Author :
Cha, H.-Y. ; Choi, Y.C. ; Eastman, L.F. ; Spencer, M.G.
Author_Institution :
Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A cascode model is proposed to analyse current-voltage and cutoff frequency characteristics of the buried-gate device. A high saturation current of the buried-gate device is associated with the short channel FET representing the buried region. Two unsaturated side FETs result in a relatively lower cutoff frequency of the buried-gate device compared to the gate-recessed one.
Keywords :
Schottky gate field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; buried-gate SiC MESFETs; cascode model; cutoff frequency properties; short channel FET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040169
