• DocumentCode
    906589
  • Title

    Analytical cascode model of buried-gate SiC MESFETs

  • Author

    Cha, H.-Y. ; Choi, Y.C. ; Eastman, L.F. ; Spencer, M.G.

  • Author_Institution
    Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • Firstpage
    271
  • Lastpage
    273
  • Abstract
    A cascode model is proposed to analyse current-voltage and cutoff frequency characteristics of the buried-gate device. A high saturation current of the buried-gate device is associated with the short channel FET representing the buried region. Two unsaturated side FETs result in a relatively lower cutoff frequency of the buried-gate device compared to the gate-recessed one.
  • Keywords
    Schottky gate field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; buried-gate SiC MESFETs; cascode model; cutoff frequency properties; short channel FET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040169
  • Filename
    1269502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906589